Plasma processing method
US7713431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jan 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.