Patent · US Active

Gas switching mechanism for plasma processing apparatus

US7717061B2 · kind B2 · utility

18Cited by

8References

9Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Tadahiro Ishizaka · Nirasaki, JP
Naoki Yoshii · Tokyo, JP
Kohei Kawamura · Hillsboro, US
Yukio Fukuda · Kashiba, JP
Takashi Shigeoka · Yokohama, JP
Yasuhiko Kojima · Saitama, JP
Yasuhiro Oshima · Yawata, JP
Junichi Arami · Tokyo, JP
Atsushi Gomi · Yamanashi, JP

Key dates

Filing date	Sep 23, 2005
Grant date	May 18, 2010
Priority date	—
Expiry date	Apr 27, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T137/86871
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.