Method and system for controlling radical distribution
US7718030B2 · kind B2 · utility
10Cited by
8References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 23, 2005 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Nov 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.