Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes
US7718081B2 · kind B2 · utility
15Cited by
38References
20Claims
0Family size
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Key dates
| Filing date | Jun 2, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jan 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.