Method to control semiconductor film deposition characteristics
US7718225B2 · kind B2 · utility
2Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2005 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.