Planarization of a heteroepitaxial layer
US7718534B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 7, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Dec 31, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.