Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface
US7718548B2 · kind B2 · utility
7Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2007 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Feb 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76867
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.