Method for selective removal of damaged multi-stack bilayer films
US7723237B2 · kind B2 · utility
9Cited by
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21Claims
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Key dates
| Filing date | Dec 15, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jul 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31058
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.