Structures and methods for measuring beam angle in an ion implanter
US7728293B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Nov 29, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention involves an ion beam angular measurement apparatus for providing feedback for a predetermined set ion beam angle comprising an arrangement of composite pillars formed on an insulating material and wherein the composite pillars selectively allow ion beams to penetrate a first layer of a pillar, wherein resistivity measurements are taken for each of the composite pillars before and after test ion beam implantation and wherein the resistivity measurements yield information relating to an angle of the ion beam during test.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.