Power semiconductor component stack using lead technology with surface-mountable external contacts and a method for producing the same

US7728415B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Khalil Hosseini · Weihmichl, DE
• Alexander Koenigsberger · Regensburg, DE
• Ralf Otremba · Kaufbeuren, DE
• Joachim Mahler · Regensburg, DE
• Xaver Schloegel · Sachsenkam, DE
• Klaus Schiess · Allensbach, DE

Key dates

• Filing date: Dec 13, 2007
• Grant date: Jun 1, 2010
• Expiry date: Dec 29, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.