Transistor of the I-MOS type comprising two independent gates and method of using such a transistor

US7732282B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Cyrille Le Royer · Grenoble, FR
• Olivier Faynot · Seyssinet-Pariset, FR
• Laurent Clavelier · Grenoble, FR

Key dates

• Filing date: Dec 1, 2006
• Grant date: Jun 8, 2010
• Expiry date: Jul 27, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211

Abstract

The transistor comprises a source and a drain separated by a lightly doped intermediate zone. The intermediate zone forms first and second junctions respectively with the source and with the drain. The transistor comprises a first gate to generate an electric field in the intermediate zone, on the same side as the first junction, and a second gate to generate an electric field in the intermediate zone, on the same side as the second junction.