Plasma-enhanced cyclic layer deposition process for barrier layers
US7732325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2009 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.