Semiconductor ESD device and method of making same

US7732834B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Cornelius Christian Russ · Diedorf, DE
• Kai Esmark · Schwanau, DE
• David Alvarez · Saint Johnsbury Center, US
• Jens Schneider · Bielefeld, DE

Key dates

• Filing date: Jan 26, 2007
• Grant date: Jun 8, 2010
• Expiry date: Apr 9, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.