Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7736405B2 · kind B2 · utility
22Cited by
23References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2003 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.