Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby
US7737029B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 18, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.