Method for removal of immersion lithography medium in immersion lithography processes
US7741012B1 · kind B1 · utility
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6References
20Claims
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Key dates
| Filing date | Mar 1, 2004 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Aug 28, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.