Deep trench (DT) metal-insulator-metal (MIM) capacitor

US7741188B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas W. Dyer · Pleasant Valley, US
• Eduard A. Cartier · New York, US
• Michael P. Chudzik · Beacon, US
• Naim Moumen · Walden, US

Key dates

• Filing date: Mar 24, 2008
• Grant date: Jun 22, 2010
• Expiry date: Nov 7, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/957

Abstract

A deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate. In the deep trench, a layer of TiN, followed by a layer of high-k dielectric, followed by a second layer of TiN. The resulting capacitor is completely buried below the SOI layer, thereby allowing for subsequent structures to be placed over the deep trench.