Thin-film capacitor with a field modification layer

US7751177B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Douglas R. Roberts · Austin, US
• Eric D. Luckowski · Round Rock, US
• Shahid Rauf · Pleasanton, US
• Peter L. G. Ventzek · Austin, US

Key dates

• Filing date: Apr 28, 2009
• Grant date: Jul 6, 2010
• Expiry date: Apr 28, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/688

Abstract

A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.