Patterning method utilizing SiBN and photolithography
US7754622B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Jun 6, 2008 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.