Fabrication method of a mixed substrate and use of the substrate for producing circuits
US7759175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Nov 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The fabrication method of a mixed substrate comprising a tensile strained silicon-on-insulator portion and a compressive strained germanium-on-insulator portion comprises a first step of producing a strained silicon-on-insulator base substrate comprising first and second tensile strained silicon zones. After the base substrate has been produced, the method comprises the successive steps of masking the first tensile strained silicon zone forming the tensile strained silicon-on-insulator portion of the substrate, of performing germanium enrichment treatment of the second tensile strained silicon zone of the base substrate until a compressive strained germanium layer is obtained forming said compressive strained germanium-on-insulator portion of the substrate, and of removing the masking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.