High current semiconductor power device SOIC package
US7759775B2 · kind B2 · utility
5Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jul 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high current semiconductor power SOIC package is disclosed. The package includes a relatively thick lead frame formed of a single gauge material having a thickness greater than 8 mils, the lead frame having a plurality of leads and a first lead frame pad, the first lead frame pad including a die soldered thereto; a pair of lead bonding areas being disposed in a same plane of a top surface of the die; large diameter bonding wires connecting the die to the plurality of leads, the bonding wires being aluminum; and a resin body encapsulating the die, bonding wires and at least a portion of the lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.