Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US7760329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/701
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.