Patent · US Active

Test structure for determining characteristics of semiconductor alloys in SOI transistors by x-ray diffraction

US7763476B2 · kind B2 · utility

0Cited by

0References

7Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Kai Frohberg · Meißen, DE
Thomas Werner · Radebeul, DE
Holger Schuehrer · Dresden, DE

Key dates

Filing date	Feb 7, 2007
Grant date	Jul 27, 2010
Priority date	—
Expiry date	Dec 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing test features of increased thickness in a test structure for performing an x-ray diffraction measurement for evaluating the crystalline characteristics, such as the contents of germanium, an increased accuracy may be achieved, since the patterned SOI layer may be used as an efficient reference for the required data analysis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.