Patent · US Active

Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility

US7767540B2 · kind B2 · utility

9Cited by

3References

11Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Igor Peidous · Fishkill, US
Thorsten Kammler · Radeberg, DE
Andy Wei · Queensbury, US

Key dates

Filing date	Dec 6, 2006
Grant date	Aug 3, 2010
Priority date	—
Expiry date	Apr 23, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/68
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By appropriately orienting the channel length direction with respect to the crystallographic characteristics of the silicon layer, the stress-inducing effects of strained silicon/carbon material may be significantly enhanced compared to conventional techniques. In one illustrative embodiment, the channel may be oriented along the <100> direction for a (100) surface orientation, thereby providing an electron mobility increase of approximately a factor of four.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.