Substrate production method and substrate including amorphization and recrystallizing a top region
US7767545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | May 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the manufacture of a substrate having a top layer of a first material and an underlying layer of a second material whose lattice parameter is different from that of the first material. The process includes the steps of conducting an amorphization of the top layer to create an amorphous region in the top layer lying between an exposed surface and an amorphization interface, with that portion of the top layer below the interface being shielded from the amorphization and remaining as a crystalline structure; recrystallizing the amorphous region while also creating a network of defects at the interface, wherein the network forms a boundary for dislocations from the crystalline structure of the top layer, and containing the dislocations in the portion of the top layer that is located below the interface. Also, the substrates obtained by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.