Phase change memory device and method of fabricating the same
US7767568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Nov 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.