Optoelectronic memory devices
US7768815B2 · kind B2 · utility
4Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Aug 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0054
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.