Method of and circuit for protecting a transistor formed on a die

US7772093B2 · kind B2 · utility

Assignee

• XILINX, INC. · US

Inventors

• Yuhao Luo · San Jose, US
• Shuxian Wu · San Jose, US
• Xin Wu · Fremont, US
• Jae-Gyung Ahn · Sosu-myeon, KR
• Deepak Nayak · Kanchinakote, IN
• Daniel Gitlin · Palo Alto, US

Key dates

• Filing date: Oct 26, 2007
• Grant date: Aug 10, 2010
• Expiry date: Mar 6, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/601

Abstract

A method of protecting a transistor formed on a die of an integrated circuit is disclosed. The method comprises forming an active region of the transistor on the die; forming a gate of the transistor over the active region; coupling a primary contact to the gate of the transistor; coupling a programmable element between the gate of the transistor and a protection element; and decoupling the protection element from the gate of the transistor by way of the programmable element. Circuits for protecting a transistor formed on a die of an integrated circuit are also disclosed.