Semiconductor system with surface modification
US7772128B2 · kind B2 · utility
1Cited by
1References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jan 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.