Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen
US7772678B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Dec 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.