Semiconductor device structure having low and high performance devices of same conductive type on same substrate

US7776695B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John C. Arnold · North Chatham, US
• Dureseti Chidambarrao · Weston, US
• Ying Li · Potsdam, US
• Rajeev Malik · Pleasantville, US
• Shreesh Narasimha · Beacon, US
• Siddhartha Panda · Beacon, US
• Brian L. Tessier · Poughkeepsie, US
• Richard S. Wise · Beacon, US

Key dates

• Filing date: Jan 9, 2006
• Grant date: Aug 17, 2010
• Expiry date: Sep 10, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate a first gate with first spacers, a second gate with second spacers, respective source and drain regions of a same conductive type adjacent to the first gate and the second gate, an isolation region disposed intermediate of the first gate and the second gate, silicides on the first gate, the second gate and respective source and drain regions; forming additional spacers on the first spacers to produce an intermediate structure, and then disposing a stress layer over the entire intermediate structure.