Method for etching silicon-germanium in the presence of silicon
US7776745B2 · kind B2 · utility
4Cited by
3References
3Claims
0Family size
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Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Oct 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.