Method and apparatus for ultra thin wafer backside processing
US7776746B2 · kind B2 · utility
8Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Aug 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.