Semiconductor thermal process control
US7778533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2002 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Sep 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.