Vortex chamber lids for atomic layer deposition

US7780789B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Dien-Yeh Wu · San Jose, US
• Puneet Bajaj · Savanuru, IN
• Xiaoxiong Yuan · Cupertino, US
• Steven H. Kim · Union City, US
• Schubert S. Chu · San Francisco, US
• Paul F. Ma · Santa Clara, US
• Joseph AuBuchon · San Jose, US

Key dates

• Filing date: Oct 24, 2007
• Grant date: Aug 24, 2010
• Expiry date: Oct 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76871
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.