Patent · US Active

Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices

US7781329B2 · kind B2 · utility

0Cited by

3References

24Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Axel Preusse · Radebeul, DE
Markus Nopper · Dresden, DE
Thomas Ortleb · Dresden, DE
Juergen Boemmels · Heverlee, BE

Key dates

Filing date	Apr 17, 2009
Grant date	Aug 24, 2010
Priority date	—
Expiry date	Apr 17, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1433
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.