Semiconductor substrate having a protection layer at the substrate back side

US7781343B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Tobias Letz · Dresden, DE
• Holger Schuehrer · Dresden, DE
• Markus Nopper · Dresden, DE

Key dates

• Filing date: Jun 4, 2007
• Grant date: Aug 24, 2010
• Expiry date: Nov 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1433
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.