Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US7781605B2 · kind B2 · utility
9Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2009 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Oct 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.