CMOS imager array with recessed dielectric

US7781781B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James W. Adkisson · Jericho, US
• Jeffrey P. Gambino · Gresham, US
• Zhong-Xiang He · South Burlington, US
• Mark D. Jaffe · Shelburne, US
• Robert K. Leidy · Burlington, US
• Stephen E. Luce · Underhill, US
• Richard J. Rassel · Tappahannock, US
• Edmund J. Sprogis · Underhill, US

Key dates

• Filing date: Nov 17, 2006
• Grant date: Aug 24, 2010
• Expiry date: Nov 20, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8053

Abstract

A CMOS image sensor array and method of fabrication. The CMOS imager sensor array comprises a substrate; an array of light receiving pixel structures formed above the substrate, the array having formed therein “m” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer; a dense logic wiring region formed adjacent to the array of light receiving pixel structures having “n” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer, where n>m. A microlens array having microlenses and color filters formed above the interlevel dielectric material layer, a microlens and respective color filter in alignment with a respective light receiving structure formed at a surface of the substrate. A top surface of the interlevel dielectric material layer beneath the microlens array is recessed from a top surface of the interlevel dielectric material layers of the dense logic wiring region.