Patent · US Active

Method of controlling the film properties of PECVD-deposited thin films

US7785672B2 · kind B2 · utility

241Cited by
28References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 2004
Grant dateAug 31, 2010
Priority date
Expiry dateJun 4, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02274
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.