Patent · US Active

Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device

US7785935B2 · kind B2 · utility

2Cited by

1References

12Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Ole Bosholm · Dresden, DE
Marco Lepper · Dresden, DE
Goetz Springer · Dresden, DE
Detlef Weber · Grünberg, DE
Grit Bonsdorf · Dresden, DE
Frank Pietzschmann · Dresden, DE

Key dates

Filing date	Nov 13, 2007
Grant date	Aug 31, 2010
Priority date	—
Expiry date	Jun 18, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.