Method and apparatus for optimizing an optical proximity correction model
US7788609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Nov 4, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method includes receiving optical profiles for a plurality of design target features associated with an integrated circuit device and optical profiles for a plurality of test features. An optical proximity correction (OPC) model including a plurality of terms is defined. Each term relates to at least one parameter in the optical profiles. A subset of the model terms is identified as being priority terms. Parameters of the optical profiles of the test features are matched to parameters of the optical profiles of the design target features using the priority terms to generate a set of matched test features. A metrology request is generated to collect metrology data from a test wafer having formed thereon at least a first subset of the matched test features and a second subset of the design target features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.