Method to prevent alloy formation when forming layered metal oxides by metal oxidation
US7790497B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Apr 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.