Method of trimming semiconductor elements with electrical resistance feedback
US7790518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Mar 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.