Method to increase the compressive stress of PECVD dielectric films
US7790635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jun 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.