Multi-station deposition apparatus and method
US7794789B2 · kind B2 · utility
0Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2009 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | May 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.