Method for forming isolation structures

US7795107B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roland Hampp · Bad Abbach, DE
• Alois Gutmann · Poughkeepsie, US
• Jin-Ping Han · Fishkill, US
• O Sung Kwon · Wappingers Falls, US

Key dates

• Filing date: Sep 2, 2009
• Grant date: Sep 14, 2010
• Expiry date: Sep 2, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0227

Abstract

A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.