ALD of metal silicate films
US7795160B2 · kind B2 · utility
396Cited by
31References
31Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Sep 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.