Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode
US7799188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2009 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Sep 11, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D21/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.