Method of treating interface defects in a substrate
US7799651B2 · kind B2 · utility
3Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.